Intel LF80537GG0252M Datasheet download pdf (Page 49)

Datasheet

Electrical Specifications

NOTES:

1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.

2. The V

CCP

referred to in these specifications refers to instantaneous V

CCP

3. Measured at 0.1 *V

CCP

4. Measured at 0.9 *V

CCP

5. For Vin between 0 V and V

CCP

. Measured when the driver is tristated.

6. Cpad1 includes die capacitance only for DPRSTP#, DPSLP#, PWRGOOD. No package parasitics are

included.

7. Cpad2 includes die capacitance for all other CMOS input signals. No package parasitics are included.

NOTES:

1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.

2. Measured at 0.2 V.

3. V

is determined by value of the external pull-up resistor to V

CCP

4. For Vin between 0 V and V

5. Cpad includes die capacitance only. No package parasitics are included.

Table 14. CMOS Signal Group DC Specifications

Symbol Parameter Min Typ Max Unit Notes

CCP

I/O Voltage 1.00 1.05 1.10 V

Input Low Voltage CMOS -0.10 0.00 0.3*V

CCP

Input High Voltage 0.7*V

CCP

+0.1 V 2

Output Low Voltage -0.10 0 0.1*V

CCP

Output High Voltage 0.9*V

CCP

+0.1 V 2

Output Low Current 1.5 — 4.1 mA 3

Output High Current 1.5 — 4.1 mA 4

Input Leakage Current — — ±100 µA 5

Cpad1 Pad Capacitance 1.80 2.30 2.75 pF 6

Cpad2 Pad Capacitance for CMOS Input 0.95 1.2 1.45 pF 7

Table 15. Open Drain Signal Group DC Specifications

Symbol Parameter Min Typ Max Unit Notes

Output High Voltage V

CCP

–5% V

CCP

+5% V 3

Output Low Voltage 0 — 0.20 V

Output Low Current 16 — 50 mA 2

Output Leakage Current — — ±200 µA 4

Cpad Pad Capacitance 1.80 2.30 2.75 pF 5

1 2 ... 44 45 46 47 48 49 50 51 52 53 54 ... 112 113

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Intel LF80537GG0252M Datasheet Page 49

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