Intel B80532PG0962M Datasheet Page 23

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Intel
®
Pentium
®
4 Processor on 0.13 Micron Process Datasheet 23
Electrical Specifications
2.10 Maximum Ratings
Table 2-5 lists the processors maximum environmental stress ratings. The processor should not
receive a clock while subjected to these conditions. Functional operating parameters are listed in
the DC tables. Extended exposure to the maximum ratings may affect device reliability.
Furthermore, although the processor contains protective circuitry to resist damage from Electro
Static Discharge (ESD), one should always take precautions to avoid high static voltages or electric
fields.
NOTES:
1. This rating applies to any processor pin.
2. Contact Intel for storage requirements in excess of one year.
2.11 Processor DC Specifications
The processor DC specifications in this section are defined at the processor core silicon unless
noted otherwise. See Chapter 4 for the pin signal definitions and signal pin assignments. Most of
the signals on the processor system bus are in the AGTL+ signal group. The DC specifications for
these signals are listed in Table 2-9.
Previously, legacy signals and Test Access Port (TAP) signals to the processor used low-voltage
CMOS buffer types. However, these interfaces now follow DC specifications similar to GTL+. The
DC specifications for these signal groups are listed in Table 2-10.
Table 2-6 through Table 2-10 list the DC specifications for the Pentium 4 processor on 0.13 micron
process, and are valid only while meeting specifications for case temperature, clock frequency, and
input voltages. Care should be taken to read all notes associated with each parameter.
Processors with multiple VID have I
CC_MAX
of the highest VID for the specified frequency. For
example, for processors through 2.80 GHz, the I
CC_MAX
would be the one at VID=1.525 V.
Table 2-5. Processor DC Absolute Maximum Ratings
Symbol Parameter Min Max Unit Notes
T
STORAGE
Processor storage temperature –40 85 °C 2
V
CC
Any processor supply voltage with respect to V
SS
–0.3 1.75 V 1
V
inAGTL+
AGTL+ buffer DC input voltage with respect to V
SS
–0.1 1.75 V
V
inAsynch_GTL+
Asynch GTL+ buffer DC input voltage with respect
to V
SS
–0.1 1.75 V
I
VID
Max VID pin current 5 mA
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